smd type 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter kxt5551 (cxt5551) features high current (max. 500ma). low voltage (max. 150 v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v cbo i c =100 a 180 v collector to emitter breakdown voltage v ceo i c =1.0ma 160 v emitter to base breakdown voltage v ebo i e =10 a 6.0 v v cb = 120 v, i e = 0 50 na v cb = 120 v, t a =100 50 a i c =1.0ma;v ce =5.0v 80 i c = 10ma; v ce = 5.0v 80 250 i c =50ma;v ce =5.0v 30 i c =10ma;i b = 1.0ma 0.15 v i c =50ma;i b = 5.0ma 0.20 v i c =10ma;i b = 1.0ma 1.00 v i c =50ma;i b = 5.0ma 1.00 v output capacitance c ob v cb =10v,i e = 0,f=1.0mhz 6.0 pf transition frequency f t i c =10ma;v ce =10v; f = 100 mhz 100 300 mhz v ce(sat) collector to emitter saturation voltage base to emitter saturation voltage v be(sat) h fe dc current gain i cbo collector cutoff current absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6v collector current (dc) i c 600 ma power dissipation p d 1.2 w thermal resistance junction-to-ambient r ja 104 /w junction temperature t j 150 storage temperature t stg -65to+150 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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